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Forward bending of silicon nanowires induced by strain distribution in asymmetric growth
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标题:Forward bending of silicon nanowires induced by strain distribution in asymmetric growth
文献类型:期刊
作者:Xu, Yongkang[1];Li, Lianbi[1];Zang, Yuan[2];Hu, Jichao[2];Li, Zebin[1];Chen, Hong[1];Zhang, Guoqing[1];Xia, Caijuan[1];Cho, Jeong-Hyun[3]
机构:
[1]School of Science, Xi'an Polytechnic University, Xi'an, China
[2]Department of Electronic Engineering, Xi'an University of Technology, Xi'an, China
[3]Department of Electrical and Computer Engineering, University of Minnesota, MN, United States
通讯作者:Li, Lianbi(xpu_lilianbi@163.com)
年:2021
期刊名称:Materials Letters影响因子和分区
卷:297
增刊:正刊
收录情况:EI(20211810280180)  
所属部门:应用物理
语言:外文
ISSN:0167577X
全文链接:DOI百度学术
人气指数:9
浏览次数:9
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